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Ordering number:EN4888
FX605
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
* Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. * Facilitates high-density mounting. * The FX605 is formed with two chips, each being equivalent to the 2SJ190, placed in one package. * Matched pair characteristics.
Package Dimensions
unit:mm 2120
[FX605]
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 SANYO:XP6 (Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Gate1 2:Source1 3:Source2 4:Gate2 5:Drain2 6:Drain1 (Top view)
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD PT Tch Tstg PW10s, duty cycle1% Tc=25C, 1unit Mounted on ceramic board (750mm2x0.8mm) 1unit Mounted on ceramic board (750mm2x0.8mm) Conditions Ratings -60 15 -1 -4 6 1.5 2 150 -55 to +150 Unit V V A A W W W C C
* Marking:605
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO(KOTO) TA-0111 No.4888-1/4
FX605
Continued from preceding page. Electrical Characteristics at Ta = 25C
Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=-1mA, VGS=0 VDS=-60V, VGS=0 VGS=12, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-500mA ID=-500mA, VGS=-10V ID=-500mA, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit IS=-1A, VGS=0 -1.0 0.6 1.0 0.9 1.2 160 60 10 10 13 70 30 -0.9 1.2 1.6 Conditions Ratings min -60 -100 10 -2.0 typ max Unit V A A V S pF pF pF ns ns ns ns V
No.4888-2/4
FX605
No.4888-3/4
FX605
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.4888-4/4

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